Junction induced variation and reliability for ultra-thin-body and bulk oxide MOSFETs

Author

Wen-Kuan Yeh ; Wen-Teng Chang ; Po-Ying Chen ; Cheng-Li Lin

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

215

Lastpage

218

Abstract

In this work, we investigate the impact of junction dose distribution (LDD/halo) on device characteristic variation and symmetry for ultra-thin body and bulk oxide silicon on insulator (UTBB SOI) nMOSFET. The device performance and hot carrier induced degradations have also been examined. High junction doping profile will enhances the device´s driving capability and sub-threshold swing, but makes the transistor forward and reverse characteristics unsymmetrical. Compared to high dose junction profile UTBB-SOI device, low dose junction profile device is less sensitive to substrate bias effect. After hot carrier stressing, low junction dose device with lower impact ionization exhibits better device reliability than high junction dose one.

Keywords

MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; bulk oxide MOSFET; device characteristic variation; device symmetry; driving capability; hot carrier induced degradation; junction dose distribution; junction induced reliability; junction induced variation; silicon-on-insulator nMOSFET; subthreshold swing; ultrathin body MOSFET; unsymmetrical transistor characteristic; Degradation; Hot carriers; Junctions; MOSFET; MOSFET circuits; Substrates; Threshold voltage; STRESSING; UTBB-SOI VARIANCE;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the

Conference_Location

Marina Bay Sands

ISSN

1946-1542

Print_ISBN

978-1-4799-3931-2

Type

conf

DOI

10.1109/IPFA.2014.6898123

Filename

6898123