DocumentCode :
235770
Title :
Accurate simulation of the frequency response of millimetre-wave sige amplifiers
Author :
Milner, Leigh E. ; Hall, Leonard T. ; Parker, Michael E.
Author_Institution :
Defence Sci. & Technol. Organ., Adelaide, SA, Australia
fYear :
2014
fDate :
26-27 June 2014
Firstpage :
49
Lastpage :
50
Abstract :
A method of accurately simulating the frequency response of a millimeter-wave SiGe amplifier is presented. Electromagnetic (EM) simulation is applied to the cascode sub-circuit in preference to parasitic extraction resulting in improved agreement between simulated and measured performance. Including resistors and capacitors in the EM simulation allows coupling and resonance effects to be captured which improves the simulation accuracy. Close agreement is obtained between the measured and simulated results for a 30 to 40 GHz two-stage transformer coupled amplifier fabricated using IHP´s 0.25μm SG25H1 process.
Keywords :
Ge-Si alloys; capacitors; frequency response; millimetre wave amplifiers; resistors; EM simulation; IHP SG25H1 process; SiGe; capacitors; cascode subcircuit; coupling effects; electromagnetic simulation; frequency 30 GHz to 40 GHz; frequency response; millimetre-wave amplifiers; parasitic extraction; resistors; resonance effects; simulation accuracy; size 0.25 mum; two-stage transformer coupled amplifier; BiCMOS integrated circuits; Electromagnetics; Foundries; Software; Electromagnetic simulation; Parasitic Extraction; SiGe Amplifier; mm-wave integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (AMS), 2014 1st Australian
Conference_Location :
Melbourne, VIC
Type :
conf
DOI :
10.1109/AUSMS.2014.7017360
Filename :
7017360
Link To Document :
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