DocumentCode :
2357859
Title :
Wafer line productivity optimization in a multi-technology multi-part-number fabricator
Author :
Maynard, Daniel N. ; Rosner, Raymond J. ; Kerbaugh, Michael L. ; Hamilton, Richard A. ; Bentlage, James R. ; Boye, Carol A.
Author_Institution :
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
fYear :
1998
fDate :
23-25 Sep 1998
Firstpage :
34
Lastpage :
42
Abstract :
Successful semiconductor manufacturing is driven by wafer-level productivity. Increasing profits by reducing manufacturing cost is a matter of optimizing the factors contributing to wafer productivity. The major wafer productivity components are chips per wafer (CPW), wafer process or fabricator yield (WPY) and wafer final test (WFT) or functional yield. CPW is the count of product chips fitting within the useable wafer surface, and is dependent upon the chip size, dicing channel (kerf) space, and wafer-field size. WPY yield is the percentage of wafers successfully exiting the line; losses include scrap for broken wafers and failed-wafer specifications. WFT yield is the percent of chips that meet all final parametric functional electrical test specifications. Thus, the total wafer level productivity (GCPW) is described by GCPW=CPW·WPY·WFT. IBM´s Vermont fabricator is one of the few in the industry that manufactures DRAMs, SRAMs, microprocessors, ASICs, custom logic, mixed signal, and foundry products, all on the same production floor. The product portfolio spans 12 base technologies across four photolithographic generations from 0.8 μm to 0.225 μm, with development of 0.18 μm. This also encompasses 40 major process flows and over 4000 active part numbers. Such staggering complexity has motivated IBM to consider all possible optimization of these productivity components. This paper describes some of the techniques that have been deployed to achieve this goal
Keywords :
DRAM chips; SRAM chips; application specific integrated circuits; circuit optimisation; integrated circuit testing; integrated circuit yield; microprocessor chips; mixed analogue-digital integrated circuits; photolithography; 0.18 micron; 0.8 to 0.225 micron; ASICs; DRAMs; SRAMs; WFT yield; active part numbers; broken wafers; chip size; chips per wafer; custom logic products; dicing channel space; failed-wafer specifications; final parametric functional electrical test specifications; foundry products; functional yield; kerf space; manufacturing cost; microprocessors; mixed signal products; multi-technology multi-part-number fabricator; optimization; photolithographic generations; process complexity; process flows; product chips; productivity components; scrap; semiconductor manufacturing; total wafer level productivity; useable wafer surface; wafer fabricator yield; wafer final test yield; wafer line productivity optimization; wafer losses; wafer process yield; wafer productivity; wafer productivity components; wafer-field size; wafer-level productivity; Coplanar waveguides; Cost function; Electrical products industry; Manufacturing industries; Microprocessors; Productivity; Semiconductor device manufacture; Surface fitting; Testing; Textile industry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI
Conference_Location :
Boston, MA
ISSN :
1078-8743
Print_ISBN :
0-7803-4380-8
Type :
conf
DOI :
10.1109/ASMC.1998.731382
Filename :
731382
Link To Document :
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