Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution

Author

Maiga, C.O. ; Tala-Ighil, B. ; Toutah, H. ; Boudart, B.

Author_Institution

Ecole d´Ingenieurs de Cherbourg, Laboratoire Univ. des Sci. Appliquees de Cherbourg

fYear

2005

fDate

11-14 Sept. 2005

Abstract

The work presented in this paper is concerned with the effects of a high temperature gate bias (HTGB) and a high temperature reverse bias (HTRB) stresses on non-punch-through IGBTs. The stresses were achieved during 1200 hours at 140degC. A particular interest was taken in the parameters related to the switching mode operation and experimental results on their evolution under the two types of stress are presented in a quantified way. A qualitative analysis of the switching times effects, due to the IGBTs ageing, on a pulse width modulation (PWM) inverter operation is presented

Keywords

PWM invertors; insulated gate bipolar transistors; switching convertors; 140 degC; IGBT; PWM inverter; hard-switching performances evolution; high temperature gate bias; high temperature reverse bias; nonpunch-through insulated gate bipolar transistors; pulse width modulation; qualitative analysis; switching mode operation; Aging; Insulated gate bipolar transistors; Occupational stress; Power semiconductor devices; Pulse inverters; Pulse width modulation; Pulse width modulation inverters; Semiconductor device reliability; Static power converters; Temperature; Device characterisation; IGBT; PWM; Power semiconductor device; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2005 European Conference on

Conference_Location

Dresden

Print_ISBN

90-75815-09-3

Type

conf

DOI

10.1109/EPE.2005.219370

Filename

1665560