Title :
Failure analysis of Zn-Mo particle in the molding compound causing gate-source short in non-passivated MOSFET device
Author :
Lau, C.K. ; Tan, Chee Hing
Author_Institution :
Infineon Technol. (Malaysia), Sdn. Bhd. Batu Berendam Free Trade Zone, Batu Berendam, Malaysia
fDate :
June 30 2014-July 4 2014
Abstract :
This paper presents the failure analysis steps that localized and revealed the embedded Zn-Mo particle bridging two adjacent metal traces on a non-passivated MOSFET chip by using backside TIVA, frontside parallel polishing and EDX. TIVA emission spot localized between two metal traces indicates a high probability of particle defect.
Keywords :
MOSFET; X-ray chemical analysis; failure analysis; molybdenum; moulding; semiconductor device reliability; zinc; EDX; TIVA; Zn-Mo; failure analysis; gate-source short; molding compound; nonpassivated MOSFET device; particle defect; Circuit faults; Compounds; Failure analysis; Logic gates; Optical imaging; Zinc;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898140
