DocumentCode
235806
Title
Localized FIB delayering on advanced process technologies
Author
Donnet, David ; Sidorov, Oleg ; Carleson, Pete ; Rue, Chad ; Alvis, Roger ; Madala, Sridhar
Author_Institution
FEI Co., Hillsboro, OR, USA
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
146
Lastpage
149
Abstract
Good control over beam and chemistry conditions are required to enable uniform delayering of advanced process technologies in the FIB. The introduction of newer, thinner and more beam sensitive materials have made delayering more complicated. We shall introduce a new chemistry for device delayering and present results from both Ga and Xe ion beams showing its improvement over existing chemistries.
Keywords
focused ion beam technology; gallium; integrated circuit manufacture; integrated circuit reliability; ion beams; sputter etching; xenon; Ga; advanced process technologies; beam sensitive materials; focused ion beam technology; ion beams; localized FIB delayering; Chemistry; Copper; Dielectrics; Failure analysis; Materials; Milling;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location
Marina Bay Sands
ISSN
1946-1542
Print_ISBN
978-1-4799-3931-2
Type
conf
DOI
10.1109/IPFA.2014.6898144
Filename
6898144
Link To Document