DocumentCode
235810
Title
Failure analysis of low-ohmic shorts using lock-in thermography
Author
Wadhwa, K. ; Schlangen, Rudolf ; Liao, Jilong ; Tung Ton ; Marks, Howard
Author_Institution
DCG Syst., Fremont, CA, USA
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
62
Lastpage
65
Abstract
This paper will present the non-destructive Lock-in thermography (LIT) technique and its application in detecting low-ohmic power shorts in 28 nm GPU (Graphics processing units). LIT was successful in detecting power shorts within die and package down to 5 Ohms within seconds, leading to accurate and efficient root cause analysis.
Keywords
failure analysis; graphics processing units; infrared imaging; integrated circuit testing; nondestructive testing; GPU; LIT technique; failure analysis; graphics processing units; low-ohmic power shorts; non-destructive lock-in thermography technique; resistance 5 ohm; root cause analysis; size 28 nm; Electrostatic discharges; Failure analysis; Graphics processing units; Inspection; Lenses; Materials; Optical imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location
Marina Bay Sands
ISSN
1946-1542
Print_ISBN
978-1-4799-3931-2
Type
conf
DOI
10.1109/IPFA.2014.6898146
Filename
6898146
Link To Document