A linear wide-dynamic-range BiCMOS operational transconductance amplifier for high frequency applications

Author

Charoenrook, Anchada ; Soma, Mani

Author_Institution

Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA

fYear

1994

fDate

5-8 Dec 1994

Firstpage

576

Lastpage

580

Abstract

This paper presents a very linear and wide dynamic range BiCMOS operational transconductance amplifier for use in high performance, high frequency analog and mixed-signal applications. The design structure of the input stage together with the optimized use of BiCMOS technology provides the OTA with wide dynamic range and very low distortion properties. Comparisons between MOSFET, bipolar and BiCMOS configurations of the conversion stage are presented. The frequency response of the circuit is also analyzed in detail, including frequency compensation techniques. Simulation results using a generic BiCMOS technology illustrate a THD of less than -68 dB at Vin=±4 V at 50 MHz

Keywords

BiCMOS analogue integrated circuits; HF amplifiers; operational amplifiers; 4 V; 50 MHz; BiCMOS operational transconductance amplifier; THD; analog applications; distortion; frequency compensation; frequency response; high frequency applications; linear dynamic range; mixed-signal applications; simulation; BiCMOS integrated circuits; CMOS technology; Dynamic range; Frequency response; Linearity; MOSFET circuits; Operational amplifiers; Resistors; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1994. APCCAS '94., 1994 IEEE Asia-Pacific Conference on

Conference_Location

Taipei

Print_ISBN

0-7803-2440-4

Type

conf

DOI

10.1109/APCCAS.1994.514615

Filename

514615