Title :
MOCVD-grown GaAs-based resonant tunneling diodes with peak current densities in excess of 300 kA/cm/sup 2/
Author :
Mirabedini, A.R. ; Mawst, L.J. ; Botez, D. ; Marsland, R.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
By taking advantage of resonant tunneling through the second energy level of a deep quantum well in a strained-layer structure, we have achieved more than 2 times higher peak current densities (PCDs) than the ones reported for GaAs-based resonant tunneling diodes (RTDs) and more than 3 times higher PCD values than those obtained for any type of MOCVD-grown RTDs. PCD values higher than 300 kA/cm/sup 2/, peak voltages as low as 1.2 volts, and peak-to-valley current ratios (PVRs) of 3:1 at 300 K are obtained from structures with 14 A-thick Al/sub 0.8/Ga/sub 0.2/As barriers and a 57 A-thick In/sub 0.3/Ga/sub 0.7/As well.
Keywords :
CVD coatings; III-V semiconductors; gallium arsenide; resonant tunnelling diodes; semiconductor quantum wells; 1.2 V; Al/sub 0.8/Ga/sub 0.2/As-In/sub 0.3/Ga/sub 0.7/As; MOCVD growth; peak current density; peak-to-valley current ratio; quantum well; resonant tunneling diode; strained-layer structure; Current density; Diodes; Electron devices; Energy states; Gallium arsenide; Low voltage; Parasitic capacitance; Resonance; Resonant tunneling devices; Thickness measurement;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546424
