Title :
Experimentally verified quantum device simulations based on multiband models, Hartree self-consistency, and scattering assisted charging
Author :
Lake, R. ; Klimeck, G. ; Bowen, R.C. ; Fernando, C. ; Jovanovic, D. ; Blanks, D. ; Moise, T.S. ; Kao, Y.C. ; Leng, M. ; Frensley, W.R.
Author_Institution :
Corp. R&D., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Accurate predictions of the I-V characteristics of Esaki diodes, resonant tunneling diodes (RTD), and resonant interband tunneling diodes (RITD) require sophisticated models of bandstructure, charging, and scattering. We present direct comparisons of experimental and simulation data based on single, two, and 10 band models and the world´s first calculation of the electrostatic potential obtained self-consistently with scattering-assisted charging. This charge results from the incoherent scattering off of alloy disorder, interface roughness, acoustic phonons and polar-optical phonons.
Keywords :
SCF calculations; quantum interference devices; resonant tunnelling diodes; semiconductor device models; Esaki diode; Hartree self-consistency; I-V characteristics; acoustic phonons; alloy disorder; band structure; charging; electrostatic potential; incoherent scattering; interface roughness; multiband model; polar-optical phonons; quantum device simulation; resonant interband tunneling diode; resonant tunneling diode; Acoustic scattering; Diodes; Light scattering; Linear discriminant analysis; Optical scattering; Particle scattering; Phonons; Predictive models; Resonance light scattering; Tunneling;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546425
