Title :
Single electron transistors (SETs) with Nb/Nb oxides system fabricated by atomic force microscope (AFM) nano-oxidation process
Author :
Shirakashi, J. ; Ishii, M. ; Matsumoto, K. ; Miura, N. ; Konagai, M.
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
Abstract :
Summary form only given. We present the fabrication and characterization results of metal-based single electron transistors (SETs) with niobium (Nb)/Nb oxides system, Several types of ultra-small tunnel junction devices, which include diodes with double and triple junctions and SETs with side gate structure, were fabricated by atomic force microscope (AFM) nano-oxidation process. Clear single-electron charging effects such as Coulomb gap, Coulomb staircase and Coulomb oscillation characteristics were observed at about 100 K.
Keywords :
atomic force microscopy; cryogenic electronics; electron beam lithography; nanotechnology; niobium; niobium compounds; oxidation; single electron transistors; tunnel diodes; tunnel transistors; 100 K; Coulomb gap; Coulomb oscillation characteristics; Coulomb staircase; Nb-NbO; atomic force microscope; double junctions; nanooxidation process; side gate structure; single electron transistors; single-electron charging effects; triple junctions; tunnel diodes; ultra-small tunnel junction devices; Atomic force microscopy; Current measurement; Diodes; Electron microscopy; High temperature superconductors; Nanoscale devices; Niobium; Single electron transistors; Temperature dependence; Voltage;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546429
