Title :
Improvement of metal-semiconductor-metal GaN ultraviolet detectors
Author :
Huang, Z.C. ; Mott, D.B. ; Shu, P.K.
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Abstract :
Summary form only given. We have carried out a systematic study on the performance of the photoconductors made from GaN grown by metal organic chemical vapor deposition (MOCVD) using different growth conditions, and have found that both response time and responsivity of the GaN detector are improved when the material is grown using increased ammonia flow rates. We attribute this improvement to the reduction of the point defects in GaN.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium compounds; metal-semiconductor-metal structures; photodetectors; point defects; semiconductor growth; ultraviolet detectors; GaN; III-V semiconductors; ammonia flow rates; growth conditions; metal organic chemical vapor deposition; metal-semiconductor-metal devices; photoconductors; point defect reduction; response time; responsivity; ultraviolet detectors; Conducting materials; Delay; Detectors; Fluid flow measurement; Gallium nitride; MOCVD; NASA; Nitrogen; Photoconducting materials; Photoconductivity;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546430
