Fabrication of nanodevices using sub-25 nm imprint lithography

The key obstacle that prevents many nanostructures and nanodevices from becoming economically viable is the lack of a high-throughput and low-cost nanolithography method. Recently, a high-throughput and low-cost nanolithography method, imprint lithography, has been proposed and demonstrated. Here, we report new progress in imprint lithography and the first fabrication of nanodevices (such as MSM photodetectors and Si quantum wire transistors) using imprint lithography. In imprint lithography a mold with nanoscale features is first pressed into a resist film cast on a substrate to create a thickness contrast pattern in the resist. After removing the mold, an anisotropic etching process is used to transfer the pattern through the entire resist thickness by removing the remaining resist in the compressed areas.