DocumentCode
2358435
Title
Lead delamination correlation with Sn layer melting during sawing in power QFN package
Author
Vigneswaran, Letcheemana ; Mei, Chong Chooi
Author_Institution
Infineon Technol. (M) Sdn Bhd, Batu Berendan, Malaysia
fYear
2010
fDate
8-10 Dec. 2010
Firstpage
373
Lastpage
378
Abstract
Many of the semiconductor components used extensively in today´s industrial and multimedia market are beginning to migrate from traditional leaded frame designs to non-leaded QFN designs. This packaging method of map molded could reduce thermal resistance, less size for packaging & weight, suitable for medium or small pads IC with high speed & high frequency applications for products. This map molded packaging method has resulted in a shift from traditional punching techniques to sawing technique and it can reduce the manufacturing cost and increase the flexibility of designing a package. This paper describes the development of multichip power QFN package which comprises three die pads and total of forty lead counts. This paper described the lead delamination correlation with Sn layer melting.
Keywords
delamination; multichip modules; sawing; tin; Sn; layer melting; lead delamination correlation; map molded packaging method; multichip power QFN package; multimedia market; sawing; semiconductor components;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC), 2010 12th
Conference_Location
Singapore
Print_ISBN
978-1-4244-8560-4
Electronic_ISBN
978-1-4244-8561-1
Type
conf
DOI
10.1109/EPTC.2010.5702666
Filename
5702666
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