DocumentCode :
235851
Title :
Microstructural approach to failure analysis of thin film transistors
Author :
Ju Ho Lee ; SungSoon Choi ; Kwan Hun Lee
Author_Institution :
Reliability Technol. Res. Center, Korea Electron. Technol. Inst. (KETI), Seongnam, South Korea
fYear :
2014
fDate :
June 30 2014-July 4 2014
Firstpage :
87
Lastpage :
89
Abstract :
As size of electronic device miniaturized, microstructural characteristics of materials significantly affect the electrical properties of devices. In this study, microstructural approach to failure analysis of thin film transistors is presented using two examples. Also, we directly demonstrated correlation between electrical properties and microstructural characteristics using transmission electron microscopy.
Keywords :
failure analysis; thin film transistors; transmission electron microscopy; electrical properties; failure analysis; microstructural approach; thin film transistors; transmission electron microscopy; Aluminum oxide; Failure analysis; Films; Substrates; Thin film transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
ISSN :
1946-1542
Print_ISBN :
978-1-4799-3931-2
Type :
conf
DOI :
10.1109/IPFA.2014.6898168
Filename :
6898168
Link To Document :
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