Title :
Imaging of through-silicon vias using X-Ray computed tomography
Author :
Gambino, Jeffrey P. ; Bowe, W. ; Bronson, D.M. ; Adderly, Shawn A.
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
fDate :
June 30 2014-July 4 2014
Abstract :
X-Ray computed tomography (CT) can be useful in evaluating defects in through-silicon vias (TSVs). X-Ray CT images of two different TSV processes are presented; copper TSVs used for stacked memory on logic and tungsten TSVs used for power amplifiers. It is found that TSVs in the edge exclusion region are susceptible to defects from the TSV etch and TSV metallization processes.
Keywords :
computerised tomography; copper; integrated circuit metallisation; power amplifiers; sputter etching; three-dimensional integrated circuits; tungsten; Cu; TSV etch process; TSV metallization process; W; X-ray computed tomography; copper TSV; edge exclusion region; power amplifiers; stacked memory; through silicon vias imaging; tungsten TSV; Computed tomography; Image edge detection; Power amplifiers; Silicon; Three-dimensional displays; Through-silicon vias; X-ray imaging; TSV; TSV Failure Analysis; X-Ray Tomography;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898170
