DocumentCode
2358691
Title
Nanowire electronics
Author
Appenzeller, Joerg
Author_Institution
Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
45
Lastpage
47
Abstract
Nanowires are an ideal choice for electronic applications. The underlying reason is that they offer a number of intrinsic properties that make them uniquely suited for low-power applications that require a highly linear device response. In this article we discuss the advantages of nanowires in particular for RF applications emphasizing the critical role of the quantum capacitance for the device operation. We argue that the one-dimensional character of a nanowire is the key enabler for device operation in the quantum capacitance limit and the main reason for a vastly different switching behavior in nanowire field-effect transistors.
Keywords
capacitance; field effect transistors; low-power electronics; nanoelectronics; nanowires; semiconductor quantum wires; switching; RF applications; intrinsic properties; linear device response; low-power applications; nanowire electronics; nanowire field-effect transistors; one-dimensional property; quantum capacitance; switching; Application software; Ballistic transport; FETs; MOSFETs; Nanoscale devices; Particle scattering; Photonic band gap; Quantum capacitance; Radio frequency; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location
Athens
ISSN
1930-8876
Print_ISBN
978-1-4244-4351-2
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2009.5331359
Filename
5331359
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