• DocumentCode
    2358691
  • Title

    Nanowire electronics

  • Author

    Appenzeller, Joerg

  • Author_Institution
    Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    45
  • Lastpage
    47
  • Abstract
    Nanowires are an ideal choice for electronic applications. The underlying reason is that they offer a number of intrinsic properties that make them uniquely suited for low-power applications that require a highly linear device response. In this article we discuss the advantages of nanowires in particular for RF applications emphasizing the critical role of the quantum capacitance for the device operation. We argue that the one-dimensional character of a nanowire is the key enabler for device operation in the quantum capacitance limit and the main reason for a vastly different switching behavior in nanowire field-effect transistors.
  • Keywords
    capacitance; field effect transistors; low-power electronics; nanoelectronics; nanowires; semiconductor quantum wires; switching; RF applications; intrinsic properties; linear device response; low-power applications; nanowire electronics; nanowire field-effect transistors; one-dimensional property; quantum capacitance; switching; Application software; Ballistic transport; FETs; MOSFETs; Nanoscale devices; Particle scattering; Photonic band gap; Quantum capacitance; Radio frequency; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
  • Conference_Location
    Athens
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-4351-2
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2009.5331359
  • Filename
    5331359