DocumentCode
2358763
Title
Function by defects at the atomic scale — New concepts for non-volatile memories
Author
Waser, Rainer ; Wuttig, Matthias
Author_Institution
IEM, RWTH Aachen Univ., Julich, Germany
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
37
Lastpage
44
Abstract
A survey of non-volatile, highly scalable memory devices which utilize dedicated resistive switching phenomena in nanoscale chalcogenide-based memory cells is presented. The classification of the memory effects, the understanding of the underlying mechanisms, and the crucial role of structural defects are outlined.
Keywords
chalcogenide glasses; crystal defects; nanostructured materials; random-access storage; reviews; switching; atomic scale defects; highly scalable memory device; nanoscale chalcogenide-based memory cells; nonvolatile memories; resistive switching phenomena; review; structural defects; Amorphous materials; Crystallization; Metal-insulator structures; Nanoscale devices; Nonvolatile memory; Optical films; Optical pulses; Random access memory; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location
Athens
ISSN
1930-8876
Print_ISBN
978-1-4244-4351-2
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2009.5331362
Filename
5331362
Link To Document