Deep red vertical cavity surface emitting lasers with monolithically integrated heterojunction phototransistors for output power control

Author

Lott, J.A. ; Hyun-Kuk Shin ; Yong-Hee Lee

Author_Institution

Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

185

Lastpage

186

Abstract

A heterojunction phototransistor is placed within the lower mirror of an AlGaAs DBR QW VCSEL laser. By sampling a small fraction of the internal optical power, the phototransistor controls the laser´s continuous wave output power which has an application in optical disc storage systems.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optoelectronics; laser cavity resonators; laser mirrors; laser stability; optical disc storage; phototransistors; quantum well lasers; surface emitting lasers; AlGaAs; AlGaAs DBR QW VCSEL laser; continuous wave output power; deep red vertical cavity surface emitting lasers; internal optical power; laser stability; lower mirror; monolithically integrated heterojunction phototransistors; optical disc storage systems; output power control; Distributed Bragg reflectors; Heterojunctions; Mirrors; Optical control; Optical surface waves; Phototransistors; Sampling methods; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.558847

Filename

558847