DocumentCode
2358804
Title
Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs
Author
Tsuchiya, Toshiaki ; Mori, Yuki ; Morimura, Yuta ; Mogami, Tohru ; Ohji, Yuzuru
Author_Institution
Interdiscipl. Fac. of Sci. & Eng., Shimane Univ., Matsue, Japan
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
387
Lastpage
390
Abstract
Fluctuations in not only the number but also the individual carrier capture rate of interface traps in small gate-area MOSFETs containing only less than several interface traps have been investigated from an understanding of newly observed transient charge pumping characteristics. These fluctuations can indicate the possible impact on the fluctuations in threshold voltage of future digital MIS devices.
Keywords
MOSFET; fluctuations; interface states; transients; carrier capture rate fluctuations; digital MIS devices; interface trap number fluctuation; small gate-area MOSFET; threshold voltage; transient charge pumping characteristics; Charge carrier processes; Charge pumps; Electron traps; Fluctuations; Lead compounds; MIS devices; MOSFETs; Pulse measurements; Telegraphy; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location
Athens
ISSN
1930-8876
Print_ISBN
978-1-4244-4351-2
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2009.5331364
Filename
5331364
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