Title :
Electro-thermal investigations on silicon inverters operating at low frequency
Author :
Antonios, J. ; Ginot, N. ; Batard, C. ; Scudeller, Y. ; Machmoum, M.
Author_Institution :
2LGMPA, Univ. de Nantes, Nantes, France
Abstract :
This paper presents methods for determining power loss profiles of Si-IGBT-based inverters and the induced junction temperature. Power losses were decomposed into different waveforms in order to investigate their influence on the junction temperature of the IGBT. Junction temperature has been determined by a dynamic thermal model using the transmission matrix technique.
Keywords :
insulated gate bipolar transistors; invertors; silicon; thermal management (packaging); Si; dynamic thermal model; electrothermal management; induced junction temperature; insulated gate bipolar transistors; power loss profiles; silicon inverters; transmission matrix technique; Automotive electronics; Consumer electronics; Degradation; Driver circuits; Electronic equipment testing; Frequency; Inverters; Life testing; Photovoltaic cells; Silicon;
Conference_Titel :
Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4244-7026-6
DOI :
10.1109/ESIME.2010.5464511
