DocumentCode
2358883
Title
Transport characteristics of GaInAs nanowire junction field effect transistor
Author
Jahangir, Ifat ; Jahangir, Shafat ; Khosru, Quazi Deen Mohd
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear
2012
fDate
6-8 May 2012
Firstpage
1
Lastpage
4
Abstract
In this work, we present a numerical model for calculating transport parameters of GaInAs nanowire junction field effect transistor (NWJFET). A 3-D simulator is used to calculate drain current under different gate biases. Dependence of drain current on bias conditions, doping density and several other device parameters is also investigated. It is found that GaInAs NWJFET has very sharp switching capability which is ideal for digital applications.
Keywords
III-V semiconductors; doping; gallium compounds; indium compounds; junction gate field effect transistors; nanowires; 3D simulator; GaInAs; GaInAs nanowire junction field effect transistor; NWJFET; bias conditions; doping density; drain current calculation; Doping; FETs; Junctions; Logic gates; Materials; Mathematical model; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electro/Information Technology (EIT), 2012 IEEE International Conference on
Conference_Location
Indianapolis, IN
ISSN
2154-0357
Print_ISBN
978-1-4673-0819-9
Type
conf
DOI
10.1109/EIT.2012.6220771
Filename
6220771
Link To Document