Title :
Transport characteristics of GaInAs nanowire junction field effect transistor
Author :
Jahangir, Ifat ; Jahangir, Shafat ; Khosru, Quazi Deen Mohd
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
In this work, we present a numerical model for calculating transport parameters of GaInAs nanowire junction field effect transistor (NWJFET). A 3-D simulator is used to calculate drain current under different gate biases. Dependence of drain current on bias conditions, doping density and several other device parameters is also investigated. It is found that GaInAs NWJFET has very sharp switching capability which is ideal for digital applications.
Keywords :
III-V semiconductors; doping; gallium compounds; indium compounds; junction gate field effect transistors; nanowires; 3D simulator; GaInAs; GaInAs nanowire junction field effect transistor; NWJFET; bias conditions; doping density; drain current calculation; Doping; FETs; Junctions; Logic gates; Materials; Mathematical model; Threshold voltage;
Conference_Titel :
Electro/Information Technology (EIT), 2012 IEEE International Conference on
Conference_Location :
Indianapolis, IN
Print_ISBN :
978-1-4673-0819-9
DOI :
10.1109/EIT.2012.6220771
