Title :
High energy electron degradation of the bonding connections
Author :
Laskowski, P.R. ; Olszacki, M. ; Al Bahri, M. ; Pons, P. ; Jasiorski, M.
Author_Institution :
Nat. Centre for Nucl. Res., Otwock-Swierk, Poland
fDate :
June 30 2014-July 4 2014
Abstract :
The influence of the high energy electrons on the wire bonding connections has been investigated. To degrade the devices 6MeV electron source has been employed. The irradiation resulted in both: bonding rupture force and ohmic resistance decrease. Device degradation level was additionally evaluated by means of the electron microscopy inspection.
Keywords :
electron sources; lead bonding; radiation effects; bonding rupture force; device degradation level; electron microscopy inspection; electron source; electron volt energy 6 MeV; high energy electron degradation; irradiation; ohmic resistance decrease; wire bonding connections; Bonding; Electrical resistance measurement; Force; Microscopy; Radiation effects; Resistance; Wires;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898190
