DocumentCode
235892
Title
High energy electron degradation of the bonding connections
Author
Laskowski, P.R. ; Olszacki, M. ; Al Bahri, M. ; Pons, P. ; Jasiorski, M.
Author_Institution
Nat. Centre for Nucl. Res., Otwock-Swierk, Poland
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
106
Lastpage
109
Abstract
The influence of the high energy electrons on the wire bonding connections has been investigated. To degrade the devices 6MeV electron source has been employed. The irradiation resulted in both: bonding rupture force and ohmic resistance decrease. Device degradation level was additionally evaluated by means of the electron microscopy inspection.
Keywords
electron sources; lead bonding; radiation effects; bonding rupture force; device degradation level; electron microscopy inspection; electron source; electron volt energy 6 MeV; high energy electron degradation; irradiation; ohmic resistance decrease; wire bonding connections; Bonding; Electrical resistance measurement; Force; Microscopy; Radiation effects; Resistance; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location
Marina Bay Sands
ISSN
1946-1542
Print_ISBN
978-1-4799-3931-2
Type
conf
DOI
10.1109/IPFA.2014.6898190
Filename
6898190
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