Polarization-related properties of vertical-cavity surface-emitting lasers

Author

Kuksenkov, D.V. ; Temkin, H.

Author_Institution

Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

187

Lastpage

188

Abstract

Internal quantum efficiency, internal loss, and gain dependence on the drive current are measured independently for the two polarization eigenstates of GaAs-AlGaAs 850 nm proton implanted vertical-cavity surface-emitting lasers (VCSELs). Conditions needed to assure complete polarization stability of VCSELs are determined.

Keywords

III-V semiconductors; aluminium compounds; eigenvalues and eigenfunctions; gallium arsenide; infrared sources; laser cavity resonators; laser stability; laser transitions; light polarisation; optical losses; semiconductor lasers; surface emitting lasers; 850 nm; GaAs-AlGaAs; GaAs-AlGaAs 850 nm proton implanted vertical-cavity surface-emitting lasers; VCSELs; complete polarization stability; drive current; gain dependence; internal loss; internal quantum efficiency; laser stability; polarization eigenstates; polarization-related properties; vertical-cavity surface-emitting lasers; Bit error rate; Laser modes; Laser noise; Loss measurement; Optical fiber communication; Optical polarization; Power measurement; Stability; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.558848

Filename

558848