Local stress analysis in devices by FIB

Intrinsic stresses in bondpads may lead to early failure of IC´s. In order to determine the intrinsic stresses in semiconductor structures, a new procedure is set up. This procedure is a combined experimental/numerical approach which consists of the following steps: First, a conductive gold layer (20 nm thickness) is deposited on the power line surface; subsequently markers (small holes) for Digital Image Correlation (DIC) purposes are added using a focused ion beam (FIB). Next, a scanning electron microscope (SEM) is used to image the original (`before´) surface. The FIB is then used to mill a slot into the surface to release the intrinsic stresses, which results in contraction of the surface. Finally, a SEM image is made of the contracted (`after´) surface. DIC is used to determine in-plane displacements due to FIB milling. DIC performance was verified by the traditional strain gauge approach.