Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices

Author

Bury, E. ; Degraeve, Robin ; Moon Ju Cho ; Kaczer, Ben ; Goes, W. ; Grasser, Tibor ; Horiguchi, Naoto ; Groeseneken, Guido

Author_Institution

imec, Heverlee, Belgium

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

250

Lastpage

253

Abstract

Recently, several experimental groups have found correlations in gate and drain current fluctuations. In this paper, by studying single trap activated leakage paths, both evidence and a refined 4-state defect model are provided, ascribing additional gate tunneling current in nm-FETs to thermally activated defect states. The model is capable of explaining both positive and negative correlations in gate and drain current RTN, but also the mostly uncorrelated nature of these drain and gate RTN signals.

Keywords

field effect transistors; silicon compounds; tunnelling; BTI; HKMG devices; RTN; SILC; SiON; correlated trap sites; drain current fluctuations; gate current fluctuations; gate tunneling current; nm-FET; refined 4-state defect model; single trap activated leakage paths; thermally activated defect states; Correlation; Current measurement; High K dielectric materials; Leakage currents; Logic gates; Stress; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the

Conference_Location

Marina Bay Sands

ISSN

1946-1542

Print_ISBN

978-1-4799-3931-2

Type

conf

DOI

10.1109/IPFA.2014.6898196

Filename

6898196