Failure analysis methodology for the localization of thin and ultra-thin metal barrier residue

Author

Quah, A.C.T. ; Dayanand, N. ; Neo, S.P. ; Ang, G.B. ; Ardana, M. Gunaw ; Ma, H.H. ; Mai, Z.H. ; Lam, James

Author_Institution

GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, Singapore

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

182

Lastpage

185

Abstract

This paper describes several case studies which used a combination of laser induced techniques, photon emission microscopy and layout analysis, together with the identification of common failure signatures that are associated with CMP under-polish, for the effective localization of thin and ultra-thin Ta barrier residue in the backend of line Cu metallization stack.

Keywords

chemical mechanical polishing; copper; failure analysis; laser beam applications; metallisation; tantalum; CMP under-polish; common failure signature identification; failure analysis methodology; laser-induced techniques; layout analysis; line backend copper metallization stack; photon emission microscopy; ultrathin-metal barrier residue localization; ultrathin-tantalum barrier residue; Decision support systems; Failure analysis; Integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the

Conference_Location

Marina Bay Sands

ISSN

1946-1542

Print_ISBN

978-1-4799-3931-2

Type

conf

DOI

10.1109/IPFA.2014.6898198

Filename

6898198

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=235909