DocumentCode :
235909
Title :
Failure analysis methodology for the localization of thin and ultra-thin metal barrier residue
Author :
Quah, A.C.T. ; Dayanand, N. ; Neo, S.P. ; Ang, G.B. ; Ardana, M. Gunaw ; Ma, H.H. ; Mai, Z.H. ; Lam, James
Author_Institution :
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, Singapore
fYear :
2014
fDate :
June 30 2014-July 4 2014
Firstpage :
182
Lastpage :
185
Abstract :
This paper describes several case studies which used a combination of laser induced techniques, photon emission microscopy and layout analysis, together with the identification of common failure signatures that are associated with CMP under-polish, for the effective localization of thin and ultra-thin Ta barrier residue in the backend of line Cu metallization stack.
Keywords :
chemical mechanical polishing; copper; failure analysis; laser beam applications; metallisation; tantalum; CMP under-polish; common failure signature identification; failure analysis methodology; laser-induced techniques; layout analysis; line backend copper metallization stack; photon emission microscopy; ultrathin-metal barrier residue localization; ultrathin-tantalum barrier residue; Decision support systems; Failure analysis; Integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
ISSN :
1946-1542
Print_ISBN :
978-1-4799-3931-2
Type :
conf
DOI :
10.1109/IPFA.2014.6898198
Filename :
6898198
Link To Document :
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