DocumentCode
2359107
Title
[Front cover]
fYear
2009
fDate
14-18 Sept. 2009
Abstract
The following topics are dealt with: SRAM circuit; DRAM; OTP; high frequency devices; thin film CMOS; non-CMOS device modeling; dielectric characterization; carbon based electronics; alternative memories; silicon nanostructures; reliability and degradation; flash memories; thermal modeling; nanowire; transport engineering; RF MEMS; circuit design; high mobility channel; high k dielectrics; variability; RF power transistors; and tunneling devices.
Keywords
CMOS integrated circuits; DRAM chips; SRAM chips; flash memories; high-frequency effects; high-k dielectric thin films; integrated circuit design; nanowires; power transistors; radiofrequency integrated circuits; thin film circuits; tunnelling; DRAM; OTP; RF MEMS; RF power transistors; SRAM circuit; alternative memories; carbon based electronics; circuit design; dielectric characterization; flash memories; high frequency devices; high k dielectrics; high mobility channel; nanowire; nonCMOS device modeling; silicon nanostructures; thermal modeling; thin film CMOS; transport engineering; tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location
Athens
ISSN
1930-8876
Print_ISBN
978-1-4244-4351-2
Type
conf
DOI
10.1109/ESSDERC.2009.5331378
Filename
5331378
Link To Document