• DocumentCode
    2359126
  • Title

    Numerical simulations of thermo-mechanical stresses during the casting of multi-crystalline silicon ingots

  • Author

    Oswald, M. ; Turek, M. ; Bagdahn, J.

  • Author_Institution
    Fraunhofer Center for Silicon Photovoltaics, Halle, Germany
  • fYear
    2010
  • fDate
    26-28 April 2010
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Silicon is an important semiconductor substrate for manufacturing solar cells. The mechanical and electrical properties of multi-crystalline silicon (mc-Si) are primarily influenced by the quality of the feedstock material and the crystallization process. In this work, numerical calculations, applying finite element analysis (FEA) and finite volume methods (FVM) are presented, in order to predict thermo-mechanical stresses during the solidification of industrial size mc-Si ingots. A two-dimensional global model of an industrial multi-crystallization furnace was created for thermal stationary and time-dependent calculations using the software tool CrysMAS. Subsequent thermo-mechanical analyses of the silica crucible and the ingot were performed with the FEA code ANSYS, allowing additional calculations to define mechanical boundary conditions as well as material models. Our results show that thermal analyses are in good agreement with experimental measurements. Furthermore we show that our approach is suitable to describe the generation of thermo-mechanical stress within the silicon ingot.
  • Keywords
    casting; finite element analysis; finite volume methods; ingots; solar cells; stress analysis; thermal analysis; thermomechanical treatment; FEA; FVM; crystallization process; feedstock material; finite element analysis; finite volume methods; multicrystalline silicon ingots; numerical simulations; semiconductor substrate; software tool CrysMAS; solar cell manufacturing; thermomechanical stresses; time-dependent calculations; Casting; Crystalline materials; Mechanical factors; Numerical simulation; Photovoltaic cells; Semiconductor device manufacture; Silicon; Substrates; Thermal stresses; Thermomechanical processes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on
  • Conference_Location
    Bordeaux
  • Print_ISBN
    978-1-4244-7026-6
  • Type

    conf

  • DOI
    10.1109/ESIME.2010.5464525
  • Filename
    5464525