Title :
Defect localization enhancement using light induced CI-AFP
Author :
Dayanand, N. ; Quah, A.C.T. ; Chen, C.Q. ; Neo, S.P. ; Ang, G.B. ; Gunawardana, M. ; Mai, Z.H. ; Lam, J.C.
Author_Institution :
Product, Test, Failure Anal. Group, GLOBALFOUNDRIES Singapore, Singapore, Singapore
fDate :
June 30 2014-July 4 2014
Abstract :
This paper describes the effectiveness of using light induced Current Imaging - Atomic Force Microscopy (CI-AFP) to localize defects that are not easily detected through conventional CI-AFP. Defect localization enhancement for both memory and logic failures has been demonstrated. For advanced technology nodes memory failures, current imaging from photovoltaic effects enhanced the detection of bridging between similar types of junctions. Light induced effects also helped to improve the distinction between gated and non-gated diode, as a result enhanced localization of gate to source/drain short.
Keywords :
CMOS logic circuits; SRAM chips; atomic force microscopy; failure analysis; current imaging atomic force microscopy; defect localization enhancement; light induced CI-AFP; light induced effects; photovoltaic effects; Arrays; Failure analysis; Imaging; Junctions; Logic gates; Random access memory; Transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898201
