Defect localization enhancement using light induced CI-AFP

Author

Dayanand, N. ; Quah, A.C.T. ; Chen, C.Q. ; Neo, S.P. ; Ang, G.B. ; Gunawardana, M. ; Mai, Z.H. ; Lam, J.C.

Author_Institution

Product, Test, Failure Anal. Group, GLOBALFOUNDRIES Singapore, Singapore, Singapore

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

375

Lastpage

378

Abstract

This paper describes the effectiveness of using light induced Current Imaging - Atomic Force Microscopy (CI-AFP) to localize defects that are not easily detected through conventional CI-AFP. Defect localization enhancement for both memory and logic failures has been demonstrated. For advanced technology nodes memory failures, current imaging from photovoltaic effects enhanced the detection of bridging between similar types of junctions. Light induced effects also helped to improve the distinction between gated and non-gated diode, as a result enhanced localization of gate to source/drain short.

Keywords

CMOS logic circuits; SRAM chips; atomic force microscopy; failure analysis; current imaging atomic force microscopy; defect localization enhancement; light induced CI-AFP; light induced effects; photovoltaic effects; Arrays; Failure analysis; Imaging; Junctions; Logic gates; Random access memory; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the

Conference_Location

Marina Bay Sands

ISSN

1946-1542

Print_ISBN

978-1-4799-3931-2

Type

conf

DOI

10.1109/IPFA.2014.6898201

Filename

6898201