Title :
Hourglass concept for RRAM: A dynamic and statistical device model
Author :
Degraeve, Robin ; Fantini, Andrea ; Raghavan, N. ; Goux, L. ; Clima, S. ; Chen, Y.Y. ; Belmonte, A. ; Cosemans, S. ; Govoreanu, B. ; Wouters, D.J. ; Roussel, Philippe ; Kar, Gouri Sankar ; Groeseneken, Guido ; Jurczak, Malgorzata
Author_Institution :
Imec, Leuven, Belgium
fDate :
June 30 2014-July 4 2014
Abstract :
In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their resulting LRS and HRS-distributions.
Keywords :
dielectric materials; hafnium compounds; random-access storage; HRS-distributions; HfO; HfO-based dielectrics; LRS -distributions; RRAM switching; atomistic motion; dynamic device model; filamentary RRAM; hourglass concept; resistive random access memory; statistical device model; statistical fluctuations; statistical properties; transient modeling; Hafnium compounds; Resistance; Stochastic processes; Switches; Tin; Transient analysis;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898205
