Material characterization and failure analysis of through-silicon vias

Author

Chenglin Wu ; Tengfei Jiang ; Im, Jay ; Liechti, Kenneth M. ; Rui Huang ; Ho, Paul S.

Author_Institution

Dept. of Aerosp. Eng. & Eng. Mech., Univ. of Texas, Austin, TX, USA

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

312

Lastpage

316

Abstract

In this paper, the effects of Cu microstructure on the mechanical properties of TSV and via extrusion are studied using two types of through-silicon vias (TSVs) with different grain size distributions. A direct correlation is found between the Cu grain size and the mechanical properties of the TSVs. An analytical model is used to explore the relationship between the mechanical properties and via extrusion. The results show that small and uniform grains in the Cu vias led to smaller via extrusion. Such grain structures are effective for reducing via extrusion failure to improve TSV reliability.

Keywords

copper; extrusion; failure analysis; grain size; integrated circuit reliability; three-dimensional integrated circuits; Cu; Cu grain size; Cu microstructure; Cu vias; TSV reliability; extrusion failure; failure analysis; grain size distributions; grain structures; material characterization; mechanical properties; through-silicon vias; Analytical models; Grain size; Plastics; Silicon; Thermal analysis; Thermal loading; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the

Conference_Location

Marina Bay Sands

ISSN

1946-1542

Print_ISBN

978-1-4799-3931-2

Type

conf

DOI

10.1109/IPFA.2014.6898206

Filename

6898206