Photonic microstructures for the next generation of microcavity lasers

Author

Krauss, T.F. ; De La Rue, R.M.

Author_Institution

Optoelectron. Res. Group, Glasgow Univ., UK

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

189

Lastpage

190

Abstract

We present the first experimental demonstration of a two-dimensional photonic bandgap (2D PBG) at optical wavelengths and the localisation of light at a defect in a lD PBG structure. These are major milestones for a novel class of waveguide based GaAs-AlGaAs microcavity semiconductor lasers with very low threshold, reduced noise and a substantial degree of spontaneous emission control.

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; laser cavity resonators; laser noise; optical testing; photonic band gap; semiconductor device noise; semiconductor device testing; semiconductor lasers; spontaneous emission; waveguide lasers; GaAs-AlGaAs; lD PBG structure; light localisation; microcavity lasers; optical wavelengths; photonic microstructure; reduced noise; spontaneous emission control; two-dimensional photonic bandgap; very low threshold; waveguide based GaAs-AlGaAs microcavity semiconductor lasers; Laser noise; Microcavities; Microstructure; Optical noise; Optical waveguides; Photonic band gap; Semiconductor lasers; Semiconductor waveguides; Stimulated emission; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.558850

Filename

558850