Title :
±0.5V electronically and linearly tunable CMOS transconductor for low-voltage applications
Author :
Kaewdang, Khanittha
Author_Institution :
Dept. of Electr. & Electron. Eng., Ubon Ratchathani Univ., Ubon Ratchathani, Thailand
Abstract :
This paper proposed a CMOS circuit technique for realizing an electronically and linearly tunable transconductor for low-voltage low-power applications. The realization technique is achieved by squaring the transconductance gain (gm) of the CMOS OTA. Its input stage is design based on the dynamic threshold voltage transistor (DTMOS) for low-voltage, low-power transconductor. Its gm can be linearly tuned by an external bias current for more than 3 decades (100nA-400μA), with less than 3% nonlinearity for the input-voltage linear range of about 0.15Vp. The proposed transconductor operates under low supply voltage of ±0.5V.
Keywords :
CMOS analogue integrated circuits; biomedical electronics; low-power electronics; operational amplifiers; CMOS OTA; CMOS circuit technique; DTMOS; dynamic threshold voltage transistor; electronically tunable CMOS transconductor; external bias current; input-voltage linear range; linearly tunable CMOS transconductor; low supply voltage; low-power transconductor; low-voltage transconductor; transconductance gain; voltage 0.5 V; CMOS integrated circuits; CMOS technology; Equations; MOSFET; Threshold voltage; Transconductance; CMOS transconductor; linearly tuned; low-voltage low-power;
Conference_Titel :
Biomedical Engineering International Conference (BMEiCON), 2014 7th
Conference_Location :
Fukuoka
DOI :
10.1109/BMEiCON.2014.7017443
