DocumentCode :
2359438
Title :
Cu wire and beyond - Ag wire an alternative to Cu?
Author :
Chen, QiJia ; Pagba, Ariel ; Reynoso, Dexter ; Thomas, Sven ; Toc, Howell John
Author_Institution :
Infineon Technol., Singapore, Singapore
fYear :
2010
fDate :
8-10 Dec. 2010
Firstpage :
591
Lastpage :
596
Abstract :
Gold (Au) and aluminum (Al) has been used for wire bonding interconnect for decades. Recently, copper (Cu) is used in high temperature applications and general cost down approaches. Cu induces a higher stress on the bond pad and underlying structure due to its inherent hardness value. In this paper, we will investigate silver (Ag) as fairly new alternative for bonding wire. An overlap in terms of application exists with all other wire materials, but the package and product requirements may justify the introduction of an additional material. To assess the impact of Ag as bonding wire we have investigated the bonding on chips with active area and compared the responses with Au and Cu wires. A robust Cu based bond pad with Nickel (Ni) and Palladium (Pd) layers as the pad stacks were used. Initial bonding responses show similar results for Ag and Au. Both Ag and Au show less impact on the bond pad than Cu. This encourages further investigation of Ag as a bonding wire alternative.
Keywords :
aluminium; copper; gold; lead bonding; nickel; palladium; silver; Ag; Al; Au; Cu; Ni; Pd; bond pad; high temperature applications; wire bonding interconnect; wire materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2010 12th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-8560-4
Electronic_ISBN :
978-1-4244-8561-1
Type :
conf
DOI :
10.1109/EPTC.2010.5702707
Filename :
5702707
Link To Document :
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