DocumentCode
2359539
Title
Oxide Soft BreakDown : From device modeling to small circuit simulation
Author
Gerrer, L. ; Ghibaudo, G. ; Ribes, G.
Author_Institution
IMEP-LAHC, Minatec-INPG, Grenoble, France
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
355
Lastpage
358
Abstract
After several experiments of the impact of Soft- Breakdown on MOS device´s operation and parameters, we use the current partitioning equations to express the channel debiasing and compare its influence to the leakage current. A 3D TCAD model is set up and directly used in small circuit´s mixed mode simulations to evaluate the SBD impact on inverters and SRAM processes. Finally an analytical model of the degradation effects is proposed, to be integrated to compact models.
Keywords
MOS integrated circuits; circuit simulation; integrated circuit modelling; MOS device operation; SRAM process; channel debiasing; current partitioning equations; degradation effects; device modeling; inverter process; leakage current; oxide soft breakdown; small circuit mixed mode simulations; small circuit simulation; Analytical models; Breakdown voltage; Circuit simulation; Electric breakdown; Gate leakage; Inverters; Leakage current; Random access memory; Stress; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location
Athens
ISSN
1930-8876
Print_ISBN
978-1-4244-4351-2
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2009.5331399
Filename
5331399
Link To Document