Title :
RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects
Author :
Sagong, Hyun Chul ; Lee, Kyong Taek ; Kang, Chang Yong ; Choi, Gil-Bok ; Choi, Hyun-Sik ; Baek, Rock-Hyun ; Park, Min-Sang ; Jung, Sung-Woo ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Abstract :
RF performances of 100-nm metal gate/high-k dielectric nMOSFET and parameters degradation by hot carrier injection to apply to RF integrated circuits are investigated. The attained nMOSFETs RF performances are 132-GHz fT and 44-GHz fmax. In addition to RF figures of merit (FOM, fT and fmax), variation of capacitance and resistance is monitored to study hot carrier effects.
Keywords :
MOSFET; high-k dielectric thin films; hot carriers; microwave field effect transistors; RF integrated circuits; RF performance degradation; capacitance; current gain cutoff frequency; figures of merit; hot carrier effects; hot carrier injection; maximum oscillation frequency; metal gate-high-k dielectric nMOSFET; resistance; size 100 nm; Degradation; High-K gate dielectrics; Hot carrier effects; Hot carrier injection; Hot carriers; Integrated circuit measurements; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Voltage;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331402
