Single event effects on commercial SRAMs and power MOSFETs: final results of the CRUX flight experiment on APEX

Author

Barth, Janet L. ; Adolphsen, John W. ; Gee, George B.

Author_Institution

NASA Goddard Space Flight Center, Greenbelt, MD, USA

fYear

1998

fDate

36000

Firstpage

1

Lastpage

10

Abstract

The CRUX experiment on the APEX satellite monitored single event effects on 1 Mbit and 256 Kbit SRAMs and 100 volt and 200 volt power MOSFETs. The single event upsets (SEUs) on the SRAMs were mapped in geographic and geomagnetic coordinates. Other single event effects (SEEs) were observed, including multiple bits upsets (MBUs) and single hard errors (“stuck bits”). Sensitivity to programmed logic state was also analyzed. The relatively large sample sizes for most part types and almost two year flight time in a hostile radiation environment provided a data set adequate for investigation of the range in device response within the flight lots. Single event burn-out (SEB) conditions were observed on the power MOSFETs. The rates on the 200 volt devices were much higher than on the 100 volt and occurred primarily in regions of space dominated by trapped protons

Keywords

SRAM chips; avionics; power MOSFET; proton effects; radiation hardening (electronics); space vehicle electronics; 1 Mbit; 100 V; 200 V; 256 Kbit; APEX satellite; CRUX flight experiment; commercial SRAMs; geographic coordinates; geomagnetic coordinates; hostile radiation environment; multiple bits upsets; power MOSFETs; programmed logic state sensitivity; single event burn-out; single event effects; single hard errors; stuck bits; trapped protons; Extraterrestrial measurements; Logic devices; MOSFETs; Predictive models; Protons; Random access memory; Satellites; Single event transient; Single event upset; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1998. IEEE

Conference_Location

Newport Beach, CA

Print_ISBN

0-7803-5109-6

Type

conf

DOI

10.1109/REDW.1998.731465

Filename

731465