Title :
Compendium of single event failures in power MOSFETs
Author :
Coss, J.R. ; Swift, G.M. ; Selva, L.E. ; Titus, J.L. ; Normand, E. ; Oberg, D.L. ; Wert, J.L.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This compendium of SEGR and SEB data organizes results from several laboratories comparing failure thresholds for several different manufacturers and technologies. The results of this compendium are aimed at the designer to show the possible variations between manufacturers and processes. The compendium incorporates previously published data with the most recent data obtained from various sources
Keywords :
collections of physical data; power MOSFET; proton effects; radiation hardening (electronics); semiconductor device testing; data compendium; failure thresholds; power MOSFETs; single event burnout; single event failures; single event gate rupture; single ion strikes; Laboratories; MOSFETs; Manufacturing processes; Power transistors; Propulsion; Rectifiers; Semiconductor device manufacture; Temperature; Testing; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
DOI :
10.1109/REDW.1998.731468
