DocumentCode :
235969
Title :
Fabrication and study of large area QHE devices based on epitaxial graphene
Author :
Novikov, S. ; Lebedeva, N. ; Satrapinski, A.
Author_Institution :
Dept. of Micro & Nanosci., Aalto Univ., Espoo, Finland
fYear :
2014
fDate :
24-29 Aug. 2014
Firstpage :
32
Lastpage :
33
Abstract :
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 1011 cm-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.
Keywords :
Hall effect devices; electric resistance measurement; electrical contacts; epitaxial growth; graphene; semiconductor device metallisation; semiconductor growth; silicon compounds; thin film devices; wide band gap semiconductors; C-SiC; QHE resistance standard; double metallization process; epitaxial graphene film; graphene-metal contacting area; half-integer quantum Hall effect; initial carrier concentration; large area QHE device; magnetic field; magnetic flux density 4 T; quantum Hall effect device; Electrical resistance measurement; Epitaxial growth; Fabrication; Graphene; Magnetic fields; Metallization; Epitaxial graphene; contact resistance; graphene fabrication; precision measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location :
Rio de Janeiro
ISSN :
0589-1485
Print_ISBN :
978-1-4799-5205-2
Type :
conf
DOI :
10.1109/CPEM.2014.6898244
Filename :
6898244
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=235969
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