Fabrication and study of large area QHE devices based on epitaxial graphene

Author

Novikov, S. ; Lebedeva, N. ; Satrapinski, A.

Author_Institution

Dept. of Micro & Nanosci., Aalto Univ., Espoo, Finland

fYear

2014

fDate

24-29 Aug. 2014

Firstpage

32

Lastpage

33

Abstract

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 10¹¹ cm^-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.

Keywords

Hall effect devices; electric resistance measurement; electrical contacts; epitaxial growth; graphene; semiconductor device metallisation; semiconductor growth; silicon compounds; thin film devices; wide band gap semiconductors; C-SiC; QHE resistance standard; double metallization process; epitaxial graphene film; graphene-metal contacting area; half-integer quantum Hall effect; initial carrier concentration; large area QHE device; magnetic field; magnetic flux density 4 T; quantum Hall effect device; Electrical resistance measurement; Epitaxial growth; Fabrication; Graphene; Magnetic fields; Metallization; Epitaxial graphene; contact resistance; graphene fabrication; precision measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on

Conference_Location

Rio de Janeiro

ISSN

0589-1485

Print_ISBN

978-1-4799-5205-2

Type

conf

DOI

10.1109/CPEM.2014.6898244

Filename

6898244