Controlling Fermi level in single layer graphene QHE device for resistance standard

Author

Fukuyama, Yasuhiro ; Elmquist, Randolph E. ; Lung-I Huang ; Yanfei Yang ; Fan-Hung Liu ; Kaneko, Nobu-hisa

Author_Institution

Nat. Metrol. Inst. of Japan (NMIJ/AIST), Tsukuba, Japan

fYear

2014

fDate

24-29 Aug. 2014

Firstpage

36

Lastpage

37

Abstract

NMIJ/AIST and NIST are collaborating on the development of graphene-based quantized Hall resistance (QHR) devices. We formed graphene films on SiC(0001) substrates and processed the samples into Hall bar devices using the NIST clean room facility. The electronic transport properties have been observed at the NIST and NMIJ/AIST. We used two methods to control the Fermi level in the samples. One is hydrogen intercalation and the other is photochemical gating. Using the former technique, the Fermi level moved across the Dirac point. For the latter technique, it moved closer to the Dirac point.

Keywords

Fermi level; Hall effect devices; electric resistance measurement; graphene; level control; photochemistry; quantum Hall effect; C; Dirac point; Fermi level control; Hall bar device; NIST clean room facility; NMIJ-AIST; QHR device; SiC; electronic transport property; graphene film; graphene-based quantized Hall resistance device; hydrogen intercalation; photochemical gating; resistance standard; single layer graphene QHE device; Charge carrier density; Graphene; Hydrogen; NIST; Resistance; Silicon carbide; Substrates; Graphene; Quantized Hall Resistance; Quantum Hall Effect; Quantum Standard; Resistance Standard;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on

Conference_Location

Rio de Janeiro

ISSN

0589-1485

Print_ISBN

978-1-4799-5205-2

Type

conf

DOI

10.1109/CPEM.2014.6898246

Filename

6898246