Breakdown of the quantum Hall effect in epitaxial graphene

Author

Janssen, T.J.B.M. ; Rozhko, S. ; Tzalenchuk, A. ; Alexander-Webber, J.A. ; Nicholas, R.J.

Author_Institution

Nat. Phys. Lab., Teddington, UK

fYear

2014

fDate

24-29 Aug. 2014

Firstpage

40

Lastpage

41

Abstract

We present the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic field. At 2 K, breakdown currents (I_c) almost 2 orders of magnitude greater than in GaAs devices are observed. We use this knowledge to explore the potential of using graphene as a high temperature (> 2 K) and low magnetic field (<; 5 T) quantum resistance standard.

Keywords

Hall effect devices; carrier density; current density; electric breakdown; graphene; magnetic fields; polymers; quantum Hall effect; silicon compounds; wide band gap semiconductors; SiC-C; carrier density; current density; magnetic field; phase space; polymer gated epitaxial graphene; quantum Hall effect breakdown; quantum resistance standard; Current measurement; Electric breakdown; Electrical resistance measurement; Graphene; Hall effect; Resistance; Silicon carbide; Graphene; measurement standards; quantum Hall effect; quantum resistance standard;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on

Conference_Location

Rio de Janeiro

ISSN

0589-1485

Print_ISBN

978-1-4799-5205-2

Type

conf

DOI

10.1109/CPEM.2014.6898248

Filename

6898248