Title :
Heavy-ion study of single event effects in 12- and 16-bit ADCs
Author :
Bee, S. ; Hopkinson, G.R. ; Harboe-Sorensen, R. ; Adams, L. ; Smith, A.
Author_Institution :
Sira Ltd., Chislehurst, UK
Abstract :
The results of a research program to evaluate heavy ion single event effects in 12- and 16-bit ADCs are presented. The devices studied were the AD676, AD7884 and AD7893. Transient and “lingering” errors were found as well as bit flips and a temporary latch-up phenomenon. Implications for test methodologies are discussed
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; analogue-digital conversion; errors; integrated circuit testing; ion beam effects; 12 bit; 12 bit ADCs; 16 bit; 16 bit ADCs; AD676; AD7884; AD7893; bit flips; heavy-ion study; single event effects; temporary latch-up phenomenon; test methodology implications; transient errors; Circuits; Cosmic rays; Data conversion; Digital control; Laboratories; Manufacturing; Protons; Pulse generation; Space technology; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
DOI :
10.1109/REDW.1998.731474
