Title :
Radiation characterisation of commercially available 1 Mbit/4 Mbit SRAMs for space applications
Author :
Poivey, C. ; Doucin, B. ; Bruggemann, M. ; Harboe-Sorensen, R.
Author_Institution :
Matra Marconi Space, Velizy, France
Abstract :
This paper presents the radiation results of a ground test program carried out on seven commercially available 1 Mbit/4 Mbit SRAMs. Heavy ion and proton single event effect (SEE) results together with Co60 total ionizing dose performance are presented for these spacecraft candidate types
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit testing; ion beam effects; proton effects; space vehicle electronics; 1 Mbit; 4 Mbit; Co60 total ionizing dose performance; commercially available SRAMs; ground test program; heavy ion SEE results; proton SEE results; radiation characterisation; single event effect results; space applications; static RAM; CMOS technology; Cyclones; Electronics packaging; Logic testing; Medical treatment; Performance evaluation; Protons; Random access memory; Single event upset; USA Councils;
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
DOI :
10.1109/REDW.1998.731477
