• DocumentCode
    2359883
  • Title

    Radiation characterisation of commercially available 1 Mbit/4 Mbit SRAMs for space applications

  • Author

    Poivey, C. ; Doucin, B. ; Bruggemann, M. ; Harboe-Sorensen, R.

  • Author_Institution
    Matra Marconi Space, Velizy, France
  • fYear
    1998
  • fDate
    36000
  • Firstpage
    68
  • Lastpage
    73
  • Abstract
    This paper presents the radiation results of a ground test program carried out on seven commercially available 1 Mbit/4 Mbit SRAMs. Heavy ion and proton single event effect (SEE) results together with Co60 total ionizing dose performance are presented for these spacecraft candidate types
  • Keywords
    CMOS memory circuits; SRAM chips; integrated circuit testing; ion beam effects; proton effects; space vehicle electronics; 1 Mbit; 4 Mbit; Co60 total ionizing dose performance; commercially available SRAMs; ground test program; heavy ion SEE results; proton SEE results; radiation characterisation; single event effect results; space applications; static RAM; CMOS technology; Cyclones; Electronics packaging; Logic testing; Medical treatment; Performance evaluation; Protons; Random access memory; Single event upset; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1998. IEEE
  • Conference_Location
    Newport Beach, CA
  • Print_ISBN
    0-7803-5109-6
  • Type

    conf

  • DOI
    10.1109/REDW.1998.731477
  • Filename
    731477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2359883