Radiation evaluation of 3.3 volt 16 M-bit DRAMs for solid state mass memory space applications

Author

Harboe-Sørensen, R. ; Brüggemann, M. ; Müller, R. ; Rombeck, F.J.

Author_Institution

Eur. Space Agency, Eur. Space Res. & Technol. Centre, Noordwijk, Netherlands

fYear

1998

fDate

36000

Firstpage

74

Lastpage

79

Abstract

This paper presents the results of a radiation evaluation programme carried out on 9 different types of commercially available low voltage (3.3 V) 16 Mbit DRAMs. Device preparation details, testing issues and results obtained, for both Single Event Effects (SEE) and Total Ionising Dose (TID), are individually presented and compared, and recommendations given in respect of earlier 5.0 V 16 Mbit types tested

Keywords

DRAM chips; gamma-ray effects; integrated circuit testing; ion beam effects; low-power electronics; proton effects; space vehicle electronics; 16 Mbit; 3.3 V; DRAM testing; SEE; commercially available DRAMs; device preparation; dynamic RAM; evaluation programme; low voltage DRAM; radiation evaluation; single event effects; solid state mass memory space applications; testing issues; total ionising dose; Content addressable storage; Low voltage; Packaging; Plastics; Procurement; Protons; Random access memory; Solid state circuits; System testing; Test facilities;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1998. IEEE

Conference_Location

Newport Beach, CA

Print_ISBN

0-7803-5109-6

Type

conf

DOI

10.1109/REDW.1998.731479

Filename

731479