High total dose response of the UTMC gate array fabricated at Lockheed Martin Federal Systems

Author

Benedetto, J.M. ; Bishop, A. ; Martin, M. ; Haddad, N.

Author_Institution

UTMC Microelectron. Syst., Colorado Springs, CO, USA

fYear

1998

fDate

36000

Firstpage

86

Lastpage

90

Abstract

The radiation response of the UTMC Microelectronic Systems (UTMC) FA01 gate array standard evaluation circuit (SEC) was measured up to a total ionizing dose of 10 Mrad(Si) using a Co-60 source. Each SEC consists of 9 functional blocks, all of which remained fully functional throughout the accumulation of total dose. In addition to functional testing, the SEC was monitored for parameter shifts in quiescent current (Q_IDD), propagation delays, input buffer data transition voltage, and output buffer drive voltage. All parameters were within specified values during the tests

Keywords

CMOS logic circuits; delays; integrated circuit reliability; integrated circuit testing; logic arrays; logic testing; radiation hardening (electronics); 0.8 micron; 10 Mrad; Co-60 source; FA01 gate array standard evaluation circuit; Lockheed Martin Federal Systems; Q_IDD monitoring; UTMC Microelectronic Systems; UTMC gate array; functional testing; high total dose response; input buffer data transition voltage; output buffer drive voltage; parameter shifts; propagation delays; quiescent current monitoring; radiation response; Application specific integrated circuits; CMOS process; CMOS technology; Ionizing radiation; Microelectronics; Propagation delay; Radiation hardening; Temperature; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1998. IEEE

Conference_Location

Newport Beach, CA

Print_ISBN

0-7803-5109-6

Type

conf

DOI

10.1109/REDW.1998.731483

Filename

731483