Title :
Commercial SOS technology for radiation-tolerant space applications
Author_Institution :
Peregrine Semicond. Corp., San Diego, CA, USA
Abstract :
We report here on an ultra thin silicon on sapphire UTSi technology that has been developed for consumer wireless applications in the 1.0-2.0 GHz range, and which also possesses excellent radiation hardness characteristics for the commercial space environment. The technology has been optimized for very high speed application, and features fully depleted device designs with 0.8 μm drawn gate lengths (0.65 μm effective gate length) in 1000 Å solid phase epitaxially recrystallized (SPE) silicon films. Large digital ASICs (100 K gates) fabricated in this technology show excellent tolerance to ionizing radiation up to the 100 krad (Si) level. There is no possibility of single event latchup (SEL) and single event error rates are lower than 1E-09 errors/bit-day
Keywords :
CMOS digital integrated circuits; UHF integrated circuits; application specific integrated circuits; integrated circuit technology; integrated circuit testing; radiation hardening (electronics); sapphire; semiconductor epitaxial layers; silicon-on-insulator; space vehicle electronics; 0.65 micron; 0.8 micron; 1 to 2 GHz; 100 krad; 1000 A; SEE rates; SPE Si films; Si-Al2O3; UTSi technology; commercial SOS technology; commercial space environment; consumer wireless applications; fully depleted device designs; ionizing radiation tolerance; large digital ASICs; radiation hardness characteristics; radiation-tolerant space applications; single event error rates; solid phase epitaxial films; ultra thin SOS technology; very high speed application; CMOS technology; Error analysis; Implants; Ionizing radiation; Isolation technology; Semiconductor films; Silicon; Solids; Space technology; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
DOI :
10.1109/REDW.1998.731485
