DocumentCode
2360105
Title
3D Nanowire-Based Programmable Logic
Author
Gojman, Benjamin ; Rubin, Raphael ; Pilotto, Concetta ; DeHon, Andre ; Tanamoto, Tetsufumi
Author_Institution
Dept. of CS, California Inst. of Technol., Pasadena, CA
fYear
2006
fDate
Sept. 2006
Firstpage
1
Lastpage
5
Abstract
In nanowire-based logic, the semiconducting material (e.g., Si, GaN, SiGe) is grown into individual nanowires rather than being part of the substrate. This offers us the opportunity to stack multiple layers of nanowires to create a three-dimensional logic structure which has high quality semiconductors in all vertical layers. The authors detail a feasible three-dimensional programmable logic architecture which can plausibly be realized from layers of semiconducting nanowires, making only modest assumptions about the control and placement of individual nanowires in the assembly. This shows a natural path for continuing to scale areal logic density once nanowire pitches approach fundamental limits. The authors show that the three dimensional systems are volumetrically efficient, with the surface area reducing roughly in proportion to the number of vertical layers. The authors further show that, on average, delay is reduced 18% from compact layout in three dimensions. For only a 20% area impact, the authors show how to avoid adding any manufacturing steps to physically isolate portions of nanowire layers
Keywords
nanowires; programmable logic arrays; 3D programmable logic; logic density; semiconducting nanowires; surface area; Gallium nitride; Germanium silicon alloys; Nanowires; Programmable control; Programmable logic arrays; Programmable logic devices; Semiconductivity; Semiconductor materials; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Networks and Workshops, 2006. NanoNet '06. 1st International Conference on
Conference_Location
Lausanne
Print_ISBN
1-4244-0391-X
Type
conf
DOI
10.1109/NANONET.2006.346223
Filename
4152806
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