Title :
Burn-in effects on total dose radiation sensitivity
Author :
Gorelick, Jerry ; McClure, Steve ; Pease, Ronald L.
Author_Institution :
Hughes Space & Commun., Los Angeles, CA, USA
Abstract :
The effects of burn-in on the sensitivity to total dose radiation of discrete transistors and linear integrated circuits (ICs) of several types from different manufacturers are examined. Significant differences in the behavior of different devices are noted. The impact of burn-in on radiation hardness assurance is assessed
Keywords :
analogue integrated circuits; integrated circuit reliability; integrated circuit testing; leakage currents; life testing; radiation hardening (electronics); semiconductor device reliability; semiconductor device testing; transistors; burn-in effects; discrete transistors; linear integrated circuits; radiation hardness assurance; total dose radiation sensitivity; Analog integrated circuits; Bipolar transistor circuits; Circuit testing; Degradation; FETs; Integrated circuit testing; MOSFET circuits; Manufacturing; Packaging; Performance evaluation;
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
DOI :
10.1109/REDW.1998.731491
