Title :
Comparison of total dose effects on micropower op-amps: bipolar and CMOS
Author :
Lee, C.I. ; Johnston, A.H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Micropower op-amps; bipolar and CMOS, from Burr-Brown and Maxim are compared and critical parameters are characterized for total dose response with a 2.7 V power supply voltage. The Burr-Brown bipolar device showed much more degradation than the CMOS device at high dose rate. The results are also compared with a NSC CMOS device. The Maxim bipolar device showed enhanced low dose rate effects
Keywords :
CMOS analogue integrated circuits; bipolar analogue integrated circuits; failure analysis; integrated circuit reliability; integrated circuit testing; low-power electronics; operational amplifiers; radiation effects; 2.7 V; Burr-Brown; CMOS type; Maxim; bipolar type; critical parameters; high dose rate effects; low dose rate effects; micropower op-amps; total dose effects; total dose response; Circuit testing; Degradation; Laboratories; Operational amplifiers; Power supplies; Propulsion; Space technology; System testing; Temperature; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
DOI :
10.1109/REDW.1998.731492
